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STPS2L25U
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS
n
2A 25 V 150 C 0.375 V
n
n
VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST EFFICIENCY IN THE APPLICATIONS AVALANCHE CAPABILITY SPECIFIED
SMB JEDEC DO-214AA
DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMB (JEDEC DO214-AA), this device is especially intended for use in parallel with MOSFETs in synchronous rectification. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage TL = 125C = 0.5 tp = 10 ms Sinusoidal tp=2 s square F=1kHz tp = 100 s tp = 1s square Value 25 10 2 75 1 1 1500 - 65 to + 150 150 10000 Unit V A A A A A W C C V/s
Tj = 25C
dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a )
1/4
July 2003 - Ed: 4A
STPS2L25U
THERMAL RESISTANCES Symbol Rth(j-l) Junction to lead Parameter Value 25 Unit C/W
STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF * Tests Conditions Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Pulse test : * tp = 380 s, < 2%
Min.
Typ. 15
Max. 90 30 0.45 0.375 0.53 0.51
Unit A mA V
VR = VRRM IF = 2 A 0.325 IF = 4 A 0.43
To evaluate the maximum conduction losses use the following equation : P = 0.24 x IF(AV) + 0.068 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current.
PF(av)(W) 1.2 1.0 0.8
=1 = 0.05 = 0.1 = 0.2 = 0.5
Fig. 2: Average forward current versus ambient temperature (=0.5).
IF(av)(A)
Rth(j-a)=Rth(j-l)
0.6 0.4 0.2
tp =tp/T IF(av) (A) 0.0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 T
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
Rth(j-a)=100C/W
T
=tp/T
tp
Tamb(C) 50 75 100 125 150
0
25
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1s)
1
Fig. 4: Normalized avalanche power derating versus junction temperature.
PARM(tp) PARM(25C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(s)
10 100 1000
Tj(C)
0 0 25 50 75 100 125 150
2/4
STPS2L25U
Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values).
IM(A) 10 9 8 7 6 5 4 3 2 IM 1 0 1E-3
Fig. 6: Relative variation of thermal impedance junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a) 1.0 0.8
Ta=25C
0.6
Ta=50C
= 0.5
0.4
Ta=100C
= 0.2
T
0.2
t
= 0.1 Single pulse
=0.5
t(s) 1E-2 1E-1 1E+0
tp(s) 1E+1
0.0 1E-2
=tp/T
tp
1E-1
1E+0
1E+2
5E+2
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values).
IR(mA) 1E+2
Tj=150C
Fig. 8: Junction capacitance versus reverse voltage applied (typical values).
C(pF) 500
F=1MHz Tj=25C
1E+1 1E+0 1E-1 1E-2 1E-3
Tj=125C Tj=100C
100
Tj=25C
VR(V) 0 5 10 15 20 25
VR(V) 10 1 2 5 10 20 30
Fig. 9: Forward voltage drop versus forward current (maximum values).
Fig. 10: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness:
Rth(j-a) (C/W)
IFM(A) 10.00
Typical values Tj=150C
120 100
1.00
Tj=125C
80
Tj=25C Tj=100C
60 40 20
0.10
VFM(V) 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
S(Cu) (cm) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
3/4
STPS2L25U
PACKAGE MECHANICAL DATA SMB DIMENSIONS
E1
REF.
Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60
Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063
D
A1 A2 b
1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75
E
c E
A1
E1
C L A2
D
b
L
FOOT PRINT DIMENSIONS (in millimeters)
2.3
1.52
2.75
1.52
Ordering type STPS2L25U
n n
Marking G23
Package SMB
Weight 0.107g
Base qty 2500
Delivery mode Tape & reel
BAND INDICATES CATHODE EPOXY MEETS UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4


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